SAMSUNG
SAMSUNG M471B5173QH0-YK0 4GB DDR3L PC3-12800 CL11 1.35V 204P SODIMM memory upgrade
4GB DDR3L SODIMM module running at 1600 MHz with CL11 latency and 1.35 V operation
- 4GB DDR3L module expands laptop memory capacity
- 1600 MHz DDR3 speed handles multitasking workloads
- 35 V low-voltage design reduces power draw
- 204-pin SODIMM form factor fits compatible notebook slots
4GB DDR3L SODIMM 1600MHz Module
This 4GB Samsung DDR3L SODIMM operates at 1600MHz with CL11 latency and a low 1.35V voltage. It uses a 204-pin form factor and 1Rx8 organisation based on 512Mx8 chips. The module conforms to the PC3-12800 standard for notebook memory upgrades.
Ideal for DDR3L laptop repairs
This module suits technicians repairing or upgrading laptops that specifically require 1.35V DDR3L SODIMMs at 1600MHz. It is not for systems limited to 1.5V DDR3, boards needing 2Rx8 density, or builds requiring 8GB or higher capacity per slot.
Highlights
- 4GB DDR3L module expands laptop memory capacity
- 1600 MHz DDR3 speed handles multitasking workloads
- 35 V low-voltage design reduces power draw
- 204-pin SODIMM form factor fits compatible notebook slots
Specifications
No published specifications for this item yet.
Questions about this item
Will the 1Rx8 organisation need any firmware update or slot pairing later?
No firmware or pairing is required; the 1Rx8 layout works in any compatible DDR3L SODIMM slot.
At 1600 MT/s with CL11 latency, which bottleneck appears first during long workloads?
The CL11 timing at 1600 MT/s is the first latency limit under sustained use.
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