Crucial CT2K8G3S160BM 16GB (2 x 8GB) DDR3 1600 SO-DIMM memory upgrade
- 204-Pin DDR3 SO-DIMM
- For Apple iMac
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Computer Memory Solutions
An 8 GB DDR3L 1600 SO-DIMM upgrade for Acer Aspire ES1-111M and ES1-311 models
This 8 GB DDR3L SODIMM module is built for the Acer Aspire ES1-111M and ES1-311 series. It delivers 1600 MHz speed at 1.35 V with CL11 latency. The unbuffered, non-ECC design suits standard notebook memory slots. Buyers upgrading a compatible Acer model gain a direct fit without configuration changes.
Verify the exact model number matches ES1-111M-C7DE, ES1-111M-P2YU or ES1-311 before ordering. The system supports a maximum of 8 GB across one socket, so this single module fills the only available slot. Confirm the existing memory is DDR3L 1.35 V; a 1.5 V DDR3 module will not operate correctly. No BIOS update is mentioned in the compatibility data.
The module uses a standard 204-pin edge connector and has no heat spreader, keeping the height low for tight chassis clearances. Major-brand chipset components are specified for reliability. A limited lifetime warranty covers manufacturing defects when purchased directly from the manufacturer. The bare PCB design allows easy insertion and removal during service.
| Brand | Computer Memory Solutions |
|---|---|
| Model | CM10246412800SODRL |
| Capacity | 8GB |
| Type | 204-Pin DDR3 SO-DIMM |
| Speed | DDR3L 1600 (PC3L 12800) |
| CAS Latency | CL11 |
| Timing | 11-11-11 |
| Voltage | 1.35V |
| ECC | No |
| Buffered/Registered | Unbuffered |
| Rank | 2Rx8 |
| Chipset | Major Brand Chipset |
| Heat Spreader | No |
| Compatible System | Acer Aspire ES1-111M-C7DE, ES1-111M-P2YU, ES1-311 |
| Package Content | 1Memory Ram Stick |
The box includes one 8 GB DDR3L 1600 SODIMM module. No extra parts or tools are needed to fit it into the compatible Acer Aspire notebook.
This 8 GB stick matches the maximum supported memory and the single socket of the ES1-111M series, so no other capacity or speed is applicable.
The module runs at DDR3L 1600 (PC3L 12800) with CL11 timing at 1.35 V, providing the full memory bandwidth the platform supports.
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