Micron Technology, Inc.
Micron Technology, Inc. Mt4Ktf25664Hz-1G6E1 DDR3-1600 2Gb SODIMM switch module
DDR3-1600 SODIMM module with 204 pins, 1.35 V operation and CL11 latency
- Low latency DDR3-1600 memory with CL11 timing
- 2 Gb capacity in 256 x 16 organisation
- 35 V operation reduces power consumption
- 204-pin SODIMM fits compatible switch modules
DDR3-1600 SODIMM switch module
Micron DDR3-1600 SODIMM memory module built for networking switch platforms. The 204-pin form factor fits compatible switch chassis requiring low-voltage DDR3 memory. New condition ensures reliable operation in managed networking equipment.
1.35 V DDR3 memory for switch upgrades
This module runs at 1.35 V with PC3-12800 speed and CL11 timing. Buyers needing higher density, different voltage or non-SODIMM form factors cannot use this part.
Highlights
- Low latency DDR3-1600 memory with CL11 timing
- 2 Gb capacity in 256 x 16 organisation
- 35 V operation reduces power consumption
- 204-pin SODIMM fits compatible switch modules
Specifications
No published specifications for this item yet.
Questions about this item
What does the DDR3-1600 rating mean once this module is installed in a system?
The DDR3-1600 rating indicates a data transfer rate of 1600 MT/s. In a real machine, the memory controller will run the module at this speed or downclock it to match the platform's maximum supported frequency.
What does the PC3-12800 designation cap in practice?
PC3-12800 specifies a peak bandwidth of 12800 MB/s. The actual throughput is limited by the memory controller and the number of populated channels in the host device.
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